A new model for 1/f noise in high-κ MOSFETs.

Autor: Morshed, T., Devireddy, S.P., Rahman, M.S., Celik-Butler, Z., Hsing-Huang Tseng, Zlotnicka, A., Shanware, A., Green, K., Chambers, J.J., Visokay, M.R., Quevedo-Lopez, M.A., Colombo, L.
Zdroj: 2007 IEEE International Electron Devices Meeting; 2007, p561-564, 4p
Databáze: Complementary Index