Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function.
| Autor: | Song, S.C., Park, C.S., Price, J., Burham, C., Choi, R., Wen, H.C., Choi, K., Tseng, H.H., Lee, B.H., Jammy, R. |
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| Zdroj: | 2007 IEEE International Electron Devices Meeting; 2007, p337-340, 4p |
| Databáze: | Complementary Index |
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