Extreme High-Performance n- and p-MOSFETs Boosted by Dual-Metal/High-k Gate Damascene Process using Top-Cut Dual Stress Liners on (100) Substrates.
| Autor: | Mayuzumi, S., Wang, J., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Yamamoto, Y., Miyanami, Y., Oshiyama, I., Tanaka, K., Tai, K., Ogawa, K., Kugimiya, K., Nagahama, Y., Hagimoto, Y., Yamamoto, R., Kanda, S., Nagano, K., Wakabayashi, H. |
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| Zdroj: | 2007 IEEE International Electron Devices Meeting; 2007, p293-296, 4p |
| Databáze: | Complementary Index |
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