A 1.0GHz multi-banked embedded DRAM in 65nm CMOS featuring concurrent refresh and hierarchical BIST.

Autor: Anand, D., Covino, J., Dreibelbis, J., Fifield, J., Gorman, K., Jacunski, M., Paparelli, J., Pomichter, G., Pontius, D., Roberge, M., Sliva, S.
Zdroj: 2007 IEEE Custom Integrated Circuits Conference; 2007, p795-798, 4p
Databáze: Complementary Index