A 0.35 μm SiGe BiCMOS technology for power amplifier applications.
| Autor: | Joseph, A., Qizhi Liu, Hodge, W., Gray, P., Stein, K., Previti-Kelly, R., Lindgren, P., Gebreselasie, E., Voegeli, B., Candra, P., Hershberger, D., Malladi, R., Ping-Chuan Wang, Watson, K., Zhong-Xiang He, Dunn, J. |
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| Zdroj: | 2007 IEEE Bipolar/BiCMOS Circuits & Technology Meeting; 2007, p198-201, 4p |
| Databáze: | Complementary Index |
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