Design of highly efficient, high output power, L-band class D.1 RF power amplifiers using GaN MESFET devices.
| Autor: | Gustavsson, U., Lejon, T., Fager, C., Zirath, H. |
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| Zdroj: | 2007 European Microwave Conference; 2007, p1089-1092, 4p |
| Databáze: | Complementary Index |
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