Investigation of FinFET Devices for 32nm Technologies and Beyond.

Autor: Shang, H., Chang, L., Wang, X., Rooks, M., Zhang, Y., To, B., Babich, K., Totir, G., Sun, Y., Kiewra, E., Ieong, M., Haensch, W.
Zdroj: 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.; 2006, p54-55, 2p
Databáze: Complementary Index