Suppression of Anomalous Gate Edge Leakage Current by Control of Ni Silicidation Region using Si Ion Implantation Technique.
| Autor: | Yamaguchi, T., Kashihara, K., Okudaira, T., Tsutsumi, T., Maekawa, K., Kosugi, T., Murata, N., Tsuchimoto, J., Shiga, K., Asai, K., Yoneda, M. |
|---|---|
| Zdroj: | 2006 International Electron Devices Meeting; 2006, p1-4, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|