Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities.
Autor: | Piner, E.L., Singhal, S., Rajagopal, P., Therrien, R., Roberts, J.C., Li, T., Hanson, A.W., Johnson, J.W., Kizilyalli, I.C., Linthicum, K.J. |
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Zdroj: | 2006 International Electron Devices Meeting; 2006, p1-4, 4p |
Databáze: | Complementary Index |
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