Device Degradation Phenomena in GaN HFET Technology: Status, Mechanisms, and Opportunities.

Autor: Piner, E.L., Singhal, S., Rajagopal, P., Therrien, R., Roberts, J.C., Li, T., Hanson, A.W., Johnson, J.W., Kizilyalli, I.C., Linthicum, K.J.
Zdroj: 2006 International Electron Devices Meeting; 2006, p1-4, 4p
Databáze: Complementary Index