SRAM Cell Static Noise Margin and VMIN Sensitivity to Transistor Degradation.
| Autor: | Krishnan, A.T., Reddy, V., Aldrich, D., Raval, J., Christensen, K., Rosal, J., O'Brien, C., Khamankar, R., Marshall, A., Loh, W.-K., McKee, R., Krishnan, S. |
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| Zdroj: | 2006 International Electron Devices Meeting; 2006, p1-4, 4p |
| Databáze: | Complementary Index |
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