Fundamental understanding and optimization of PBTI in nFETs with SiO2/HfO2 gate stack.
| Autor: | Cartier, E., Linder, B. P., Narayanan, V., Paruchuri, V. K. |
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| Zdroj: | 2006 International Electron Devices Meeting; 2006, p1-4, 4p |
| Databáze: | Complementary Index |
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