A BiCMOS Technology Featuring a 300/330 GHz (fT/fmax) SiGe HBT for Millimeter Wave Applications.
| Autor: | Orner, B.A., Dahlstrom, M., Pothiawala, A., Rassel, R.M., Liu, Q., Ding, H., Khater, M., Ahlgren, D., Joseph, A., Dunn, J. |
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| Zdroj: | 2006 Bipolar/BiCMOS Circuits & Technology Meeting; 2006, p1-4, 4p |
| Databáze: | Complementary Index |
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