High-per formance, highly reliable HfSiON gate dielectric for low Vth system LSI's.
| Autor: | Yugami, J., Inoue, M., Tsujikawa, S., Mizutani, M., Nomura, K., Hayashi, T., Nishida, Y., Shiga, K., Tsuchimoto, J., Ohno, Y., Yoneda, M. |
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| Zdroj: | 2006 8th International Conference on Solid-State & Integrated Circuit Technology Proceedings; 2006, p396-399, 4p |
| Databáze: | Complementary Index |
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