Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation.
| Autor: | Potbhare, S., Goldsman, N., Pennington, G., McGarrity, J.M., Lelis, A. |
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| Zdroj: | 2005 International Conference On Simulation of Semiconductor Processes & Devices; 2005, p95-98, 4p |
| Databáze: | Complementary Index |
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