Co-integrated dual strained channels on fully depleted sSDOI CMOSFETs with HfO2/TiN gate stack down to 15nm gate length.
| Autor: | Andrieu, F., Ernst, T., Faynot, O., Bogumilowicz, Y., Hartmann, J.-M., Eymery, J., Lafond, D., Levaillant, Y.-M., Dupre, C., Powers, R., Fournel, F., Fenouillet-Beranger, C., Vandooren, A., Ghyselen, B., Mazure, C., Kernevez, N., Ghibaudo, G., Deleonibus, S. |
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| Zdroj: | 2005 IEEE International SOI Conference Proceedings; 2005, p223-225, 3p |
| Databáze: | Complementary Index |
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