High voltage devices added to a 0.13μm high resistivity thin SOI CMOS process for mixed analog-RF circuits.
| Autor: | Bon, O., Boissonnet, L., Gonnard, O., Chouteau, S., Reynard, B., Perrotin, A., Raynaud, C. |
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| Zdroj: | 2005 IEEE International SOI Conference Proceedings; 2005, p171-173, 3p |
| Databáze: | Complementary Index |
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