Oxidation induced stress effects on hole mobility as a function of transistor geometry in a 0.15 μm dual gate oxide CMOS SOI process.
| Autor: | Fechnerand, P.S., Vogt, E.E. |
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| Zdroj: | 2005 IEEE International SOI Conference Proceedings; 2005, p163-165, 3p |
| Databáze: | Complementary Index |
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