Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs.
| Autor: | Chan, C.T., Tang, C.J., Kuo, C.H., Ma, H.C., Tsai, C.W., Wang, H.C.-H., Chi, M.H., Wang, T. |
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| Zdroj: | 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p41-44, 4p |
| Databáze: | Complementary Index |
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