Threshold voltage instability and plasma induced damage of polySi/HfO2 devices - positive impact of deuterium incorporation.
| Autor: | Tseng, H.-H., Ramon, M.E., Hebert, L., Tobin, P.J., Triyoso, D., Kalpat, S., Grant, J.M., Jiang, Z.X., Gilmer, D.C., Menke, D., Taylor, W.J., Adetutu, O., White, B.E. |
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| Zdroj: | 2004 International Conference on Integrated Circuit Design & Technology (IEEE Cat. No.04EX866); 2004, p255-259, 5p |
| Databáze: | Complementary Index |
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