Recovery of shifted MOS parameters induced by focused ion beam exposure.

Autor: Kaiyuan Chen, Chatterjee, T., Parker, J., Henderson, T., Martin, R.S., Edwards, H.
Zdroj: 2002 IEEE International Reliability Physics Symposium. Proceedings 40th Annual (Cat. No.02CH37320); 2002, p194-197, 4p
Databáze: Complementary Index