Recovery of shifted MOS parameters induced by focused ion beam exposure.
Autor: | Kaiyuan Chen, Chatterjee, T., Parker, J., Henderson, T., Martin, R.S., Edwards, H. |
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Zdroj: | 2002 IEEE International Reliability Physics Symposium. Proceedings 40th Annual (Cat. No.02CH37320); 2002, p194-197, 4p |
Databáze: | Complementary Index |
Externí odkaz: |