Investigation of temperature effects on electron transport in SiC using unique full band Monte Carlo simulation.
| Autor: | Pennington, G., Goldsman, N., Scozzie, S., McGarrity, J.M., McLean, B. |
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| Zdroj: | 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p531-534, 4p |
| Databáze: | Complementary Index |
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