Determination of reliability on MOCVD grown InGaP/GaAs HBT's under both thermal and current acceleration stresses.
| Autor: | Feng, K.T., Rushing, L., Canfield, P., Flores, L. |
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| Zdroj: | 2001 GaAs Reliability Workshop. Proceedings (IEEE Cat. No.01TH8602); 2001, p159-180, 22p |
| Databáze: | Complementary Index |
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