Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique.

Autor: Troitski, V.Y., Gerasimenko, N.N., Smirnov, A.V.
Zdroj: 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p334-337, 4p
Databáze: Complementary Index