Gettering and annealing of silicon planar surface layer caused by opposite side implantation technique.
Autor: | Troitski, V.Y., Gerasimenko, N.N., Smirnov, A.V. |
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Zdroj: | 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p334-337, 4p |
Databáze: | Complementary Index |
Externí odkaz: |