Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050°C.
| Autor: | Antonova, I.V., Neustroev, E.P., Stas, V.F., Popov, V.P., Skuratov, V.A. |
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| Zdroj: | 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p115-118, 4p |
| Databáze: | Complementary Index |
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