InAs quantum dot selective area epitaxy using InGaAs thin films.

Autor: Yeoh, T.S., Huber, A.E., Woo, C.Y., Swint, R.B., Manzanedo, C., Coleman, J.J.
Zdroj: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p291-296, 6p
Databáze: Complementary Index