Raman characterization of GaAs/InGaP heterostructure bipolar transistor.
| Autor: | Amtout, A., Ferguson, I., Lee, D.S., Sun, S.Z., Armour, E.A., Cooke, P., Stall, R.A. |
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| Zdroj: | 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p25-30, 6p |
| Databáze: | Complementary Index |
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