Passivation study for In0.4AlAs/In0.65GaAs HEMTs by UHV RPECVD grown SiNx dielectrics and their impact on I-V kink and low-frequency dispersion phenomena.

Autor: Dae-Hyun Kim, Hun-Hee Noh, Sung-Sun Choi, Jae-Hak Lee, Kwang-Seok Seo
Zdroj: 16th IPRM. 2004 International Conference on Indium Phosphide & Related Materials, 2004; 2004, p354-357, 4p
Databáze: Complementary Index