600 V trench-gate NPT-IGBT with excellent low on-state voltage.
| Autor: | Tanaka, M., Teramae, S., Takahashi, Y., Takeda, T., Yamaguchi, M., Ogura, T., Tsunoda, T., Nakao, S. |
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| Zdroj: | 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094); 2000, p279-282, 4p |
| Databáze: | Complementary Index |
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