A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation.
Autor: | Hazdra, P., Vobecky, J., Galster, N., Humbel, O., Dalibor, T. |
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Zdroj: | 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094); 2000, p123-126, 4p |
Databáze: | Complementary Index |
Externí odkaz: |