A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation.

Autor: Hazdra, P., Vobecky, J., Galster, N., Humbel, O., Dalibor, T.
Zdroj: 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094); 2000, p123-126, 4p
Databáze: Complementary Index