Studying the characteristics of the photosensitive elements of photodetector matrices based on Si Pt: Si by means of induced potential and transmission electron microscopy.

Autor: Buzynin, A., Kalinushkin, V., Uvarov, O., Rau, E., Ditsman, S., Luk'yanov, F., Zolotarev, V., Lytkin, A.
Zdroj: Bulletin of the Russian Academy of Sciences: Physics; Sep2012, Vol. 76 Issue 9, p1041-1044, 4p
Abstrakt: The prospects for the combined use of scanning and transmission electron microscopy in studying defects in the matrix elements of the infrared photodetectors are considered. It is shown that combining these techniques allows us to fully realize the potential of high-voltage transmission microscopy for detecting defects that impair matrix parameters. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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