Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster.
| Autor: | Kidan Bae, Minjung Jin, Hajin Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jinchul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chulhee Jeon, Jongwoo Park |
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| Zdroj: | 2011 IEEE International Reliability Physics Symposium (IRPS); 2011, pPL.1.1-PL.1.5, 1p |
| Databáze: | Complementary Index |
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