Vertical charge imbalance effect on 600 V-class trench-filling superjunction power MOSFETs.

Autor: Tamaki, T., Nakazawa, Y., Kanai, H., Abiko, Y., Ikegami, Y., Ishikawa, M., Wakimoto, E., Yasuda, T., Eguchi, S.
Zdroj: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p308-311, 4p
Databáze: Complementary Index