High performance Pch-LDMOS transistors in wide range voltage from 35V to 200V SOI LDMOS platform technology.
| Autor: | Shimamoto, S., Yanagida, Y., Shirakawa, S., Miyakoshi, K., Imai, T., Oshima, T., Sakano, J., Wada, S. |
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| Zdroj: | 2011 IEEE 23rd International Symposium on Power Semiconductor Devices & ICs (ISPSD); 2011, p44-47, 4p |
| Databáze: | Complementary Index |
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