A 56GS/S 6b DAC in 65nm CMOS with 256×6b memory.

Autor: Greshishchev, Y.M., Pollex, D., Shing-Chi Wang, Besson, M., Flemeke, P., Szilagyi, S., Aguirre, J., Falt, C., Ben-Hamida, N., Gibbins, R., Schvan, P.
Zdroj: 2011 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC); 2011, p194-196, 3p
Databáze: Complementary Index