Suppression of the corner effects in a 22 nm hybrid Tri-Gate/planar process.

Autor: Baldauf, T., Wei, A., Herrmann, T., Flachowsky, S., Illgen, R., Hontschel, J., Horstmann, M., Klix, W., Stenzel, R.
Zdroj: 2011 Semiconductor Conference Dresden (SCD); 2011, p1-4, 4p
Databáze: Complementary Index