Realistic simulation on reverse characteristics of SiC/GaN p-n junctions for high power semiconductor devices.
| Autor: | Guannan Wei, Liang, Y.C., Samudra, G.S. |
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| Zdroj: | 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE & ECCE); 2011, p1464-1468, 5p |
| Databáze: | Complementary Index |
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