InGaAs/InP DHBTs demonstrating simultaneous ƒτ/ƒmax ∼ 460/850 GHz in a refractory emitter process.
| Autor: | Jain, V., Lobisser, E., Baraskar, A., Thibeault, B.J., Rodwell, M.J.W., Urteaga, M., Loubychev, D., Snyder, A., Wu, Y., Fastenau, J.M., Liu, W.K. |
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| Zdroj: | 2011 & 23rd International Conference on Indium Phosphide & Related Materials Compound Semiconductor Week (CSW/IPRM); 2011, p1-4, 4p |
| Databáze: | Complementary Index |
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