Characteristics of step-graded InxGa1−xAs and InGaPySb1−y metamorphic buffer layers on GaAs substrates.
Autor: | Kirch, J., Dudley, P., Kim, T., Radavich, K., Ruder, S., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C. |
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Zdroj: | 2011 & 23rd International Conference on Indium Phosphide & Related Materials Compound Semiconductor Week (CSW/IPRM); 2011, p1-4, 4p |
Databáze: | Complementary Index |
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