Characteristics of step-graded InxGa1−xAs and InGaPySb1−y metamorphic buffer layers on GaAs substrates.

Autor: Kirch, J., Dudley, P., Kim, T., Radavich, K., Ruder, S., Mawst, L.J., Kuech, T.F., LaLumondiere, S.D., Sin, Y., Lotshaw, W.T., Moss, S.C.
Zdroj: 2011 & 23rd International Conference on Indium Phosphide & Related Materials Compound Semiconductor Week (CSW/IPRM); 2011, p1-4, 4p
Databáze: Complementary Index