Highly reliable and fast nonvolatile hybrid switching ReRAM memory using thin Al2O3 demonstrated at 54nm memory array.
| Autor: | Jaeyun Yi, Hyejung Choi, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Sangkeum Lee, Sangmin Hwang, Seokpyo Song, Jinwon Park, Sookjoo Kim, Wangee Kim, Ja-Yong Kim, Sunghoon Lee, Jiwon Moon, Jinju You, Moonsig Joo, JaeSung Roh, Sungki Park, Sung-Woong Chung, Junghoon Lee |
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| Zdroj: | 2011 Symposium on VLSI Technology (VLSIT); 2011, p48-49, 2p |
| Databáze: | Complementary Index |
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