A 65 % drain efficiency GaN HEMT with 200 W peak power for 20 V to 65 V envelope tracking base station amplifier.
| Autor: | Yamaki, F., Inoue, K., Ui, N., Kawano, A., Sano, S. |
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| Zdroj: | Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International; 2011, p1-4, 4p |
| Databáze: | Complementary Index |
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