Partial conversion as a first silicidation process to fabricate low-resistive and low-leakage nickel silicide film in advanced CMOSs.
| Autor: | Futase, T., Kamino, T., Inaba, Y., Tanimoto, H. |
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| Zdroj: | 2011 11th International Workshop on Junction Technology (IWJT); 2011, p55-60, 6p |
| Databáze: | Complementary Index |
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