| Autor: |
Luan, Chongbiao, Lin, Zhaojun, Feng, Zhihong, Meng, Lingguo, Lv, Yuanjie, Cao, Zhifang, Yu, Yingxia, Wang, Zhanguo |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2012, Vol. 112 Issue 5, p054513, 5p |
| Abstrakt: |
Using the measured capacitance-voltage curves of Ni Schottky contacts with different areas and the current-voltage characteristics for the rectangular and circular In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors (HFETs) at low drain-source voltage, we found that the Ohmic contact processing and the gate bias cause the irregular distribution of the polarization charges at the In0.18Al0.82N/AlN interface which generates the polarization Coulomb field, and the polarization Coulomb field scattering has an important influence on the two-dimensional electron gas electron mobility in both our rectangular and circular In0.18Al0.82N/AlN/GaN HFET devices as same as in AlGaN/AlN/GaN HFET devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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