| Autor: |
Benson, J.D., Bubulac, L.O., Smith, P.J., Jacobs, R.N., Markunas, J.K., Jaime-Vasquez, M., Almeida, L.A., Stoltz, A., Arias, J.M., Brill, G., Chen, Y., Wijewarnasuriya, P.S., Farrell, S., Lee, U. |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Oct2012, Vol. 41 Issue 10, p2971-2974, 4p, 1 Black and White Photograph, 1 Chart, 3 Graphs |
| Abstrakt: |
Dislocations generated at the HgCdTe/CdTe(buffer layer) interface are demonstrated to play a significant role in influencing the crystalline characteristics of HgCdTe epilayers on alternate substrates (AS). A dislocation density >10 cm is observed at the HgCdTe/CdTe interface. Networks of dislocations are generated at the HgCdTe/CdTe interface. The dislocation networks are observed to entangle. Significant dislocation reduction occurs within a few microns of the HgCdTe/CdTe interface. The reduction in dislocation density as a function of depth is enhanced by annealing. Etch pit density and x-ray diffraction full-width at half-maximum values increase as a function of the lattice mismatch between HgCdTe epilayer and the buffer layer/substrate. The experimental results suggest that only by reducing HgCdTe/CdTe lattice mismatch will the desired crystallinity be achieved for HgCdTe epilayers on AS. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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