ZnS-ZnMgS-ZnS Lattice-Matched Gate Insulator as an Alternative for Silicon Dioxide on Silicon in Quantum Dot Gate FETs (QDGFETs).

Autor:	Karmakar, Supriya, Suarez, Ernesto, Gogna, Mukesh, Jain, Faquir
Předmět:	QUANTUM dots TRANSISTORS SILICA DIELECTRICS DIELECTRIC devices
Zdroj:	Journal of Electronic Materials; Oct2012, Vol. 41 Issue 10, p2663-2670, 8p, 2 Black and White Photographs, 5 Diagrams, 2 Charts, 7 Graphs
Abstrakt:	This paper presents characteristics of two fabricated Si quantum dot gate field-effect transistors, one with SiO-cladded Si dots on silicon dioxide as the gate insulator, and another with the same quantum dots on lattice-matched high- κ ZnS-ZnMgS-ZnS as the gate insulator. Simulations show that the oxide thickness should be within 80 Å to generate a third state in the transfer characteristic of the quantum dot gate field-effect transistor. In the practical device, the silicon dioxide thickness varies between 20 Å and 40 Å. In this work we use high- κ dielectric thickness around 75 Å to 80 Å, which is equivalent to 32 Å to 35 Å of silicon dioxide. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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