| Autor: |
Kaufmann, Nils A. K., Dussaigne, Amélie, Martin, Denis, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Ivaldi, Francesco, Kret, Slawomir, Grandjean, Nicolas |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Oct2012, Vol. 27 Issue 10, p1-6, 6p |
| Abstrakt: |
The effect of thermal annealing on In0.25Ga0.75N/GaN quantum wells grown by molecular beam epitaxy at 550 °C is investigated. A strong increase in the 300 K photoluminescence (PL) intensity is observed for samples annealed at 880 °C, while degradation occurs for higher temperatures. The improvement of the optical properties is ascribed to higher internal quantum efficiency (IQE), as indicated by temperature-dependent and time-resolved PL experiments. The effect of carrier localization due to possible quantum dot formation via indium clustering is ruled out based on high-resolution transmission electron microscopy imaging. IQE improvement is thus attributed to a reduction of point defects upon annealing. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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