| Autor: |
Abdullaev, N., Kerimova, A., Kahramanov, S., Bayramov, A., Miyamoto, H., Wakita, K., Mamedov, N., Nemov, S. |
| Předmět: |
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| Zdroj: |
Semiconductors; Sep2012, Vol. 46 Issue 9, p1140-1144, 5p |
| Abstrakt: |
The Bi(TeSe) solid solutions thin films are produced by 'hot wall' thermal evaporation in vacuum. From the data of X-ray diffraction studies, atomic-force microscopy of the surface relief, and Raman spectroscopy, it is established that vacuum thermal annealing at a temperature of 200°C for 1 h substantially increases the degree of film crystallization. The laser radiation excitation power optimal for studies of the Raman spectra of the Bi(TeSe) films is determined. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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