| Autor: |
Liu, Frankie Y., Patil, Dinesh, Lexau, Jon, Amberg, Philip, Dayringer, Michael, Gainsley, Jon, Moghadam, Hesam Fathi, Zheng, Xuezhe, Cunningham, John E., Krishnamoorthy, Ashok V., Alon, Elad, Ho, Ron |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Sep2012, Vol. 47 Issue 9, p2049-2067, 19p |
| Abstrakt: |
We describe transmitter and receiver circuits for a 10-Gbps single-ended optical link in a 40-nm CMOS technology. The circuits are bonded using low-parasitic micro-solder bumps to silicon photonic devices on a 130-nm SOI platform. The transmitter drives oval resonant ring modulators with a 2-V swing and employs static thermal tuners to compensate for optical device process variations. The receiver is based on a transimpedance amplifier (TIA) with 4-\k\Omega gain and designed for an input power of -15 dBm, a photodiode responsivity of 0.7 A/W, and an input extinction ratio of 6 dB. It employs a pair of interleaved clocked sense-amplifiers for voltage slicing and uses a DLL with phase adjustment for centering the clock in the data eye. Periodic calibration allows for adjustment of both voltage and timing margins. At 10 Gbps, the transmitter extinction ratio exceeds 7 dB and, excluding thermal tuning and laser power, it consumes 1.35 mW. At the same datarate, the receiver consumes 3.95 mW. On-chip PRBS generators and checkers with 2^31-1 sequences confirm operation at a BER better than 10^-12. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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