| Autor: |
Chaldyshev, V. V., Pollak, Fred H., Pophristic, M., Guo, S. P., Ferguson, I. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2002, Vol. 92 Issue 11, p6601, 6p, 1 Chart, 6 Graphs |
| Abstrakt: |
Using micro-Raman spectroscopy we have investigated the n dopant and strain distribution in lateral epitaxial overgrowth technique GaN films grown by metalorganic chemical vapor deposition on the sapphire (0001) substrates with SiN[sub x] masks. The widths of the mask stripes were 2, 4, 8, or 16 µm, while the mask windows were always 4 µm wide. In the case of narrow stripes (2 and 4 µm), when the overgrowth wings were well coalesced, the films were found to be fairly uniform with a background n doping of (4±2) × 10[sup 17] cm[sup -3]. The GaN wings in the samples with 8 and 12 µm stripes did not coalesce, leaving "V"-shaped and trapezoidal grooves, respectively. In the latter case, additional doping [ n = (6.5 ± 0.6) × 10[sup 17] cm[sup -3]] of the wing area was revealed, which may be due to surface diffusion of Si atoms from the SiN[sub x] mask to the GaN growth front and their incorporation into the growing film. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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