| Autor: |
Oborina, Elena, Campbell, Scott, Hoff, Andrew M., Gilbert, Richard, Persson, Eric |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2002, Vol. 92 Issue 11, p6773, 5p, 7 Graphs |
| Abstrakt: |
This article demonstrates that mobile charge, Q[sub m], of a nonsodium nature may exist in the thin film stack structure of phosphosilicate glass-SiO[sub 2]-Si. The behavior of the Q[sub m] in this structure has been investigated using noncontact corona charging of the dielectric surface and measurement of the surface potential with a contact potential difference, probe. Q[sub m] levels greater than 10[sup 12] cm[sup -2] have been measured in as-deposited samples whereas high temperature anneal reduced this level by half. The nonsodium nature of Q[sub m] was confirmed by surface analysis measurement. A model based on hydrogen cycling between the two interfaces of a buried oxide layer is used to explain the observed results. The experimental data suggest that charge traps exist at each interface of the buried oxide and that they control the charge release allowing it to move to the opposite interface. The activation energy for charge release from these traps depends on the nature of the interface with the lowest energy estimated near 0.22 eV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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