| Autor: |
Boikov, Yuri A., Lukyanova, Lidia N., Danilov, Viacheslav A., Volkov, Mikhail P., Goltsman, Boris M., Kutasov, Vsevolod A. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 6/26/2012, Vol. 1449 Issue 1, p107-110, 4p |
| Abstrakt: |
Galvanomagnetic properties of the thermoelectric Bi2-xSbxTe3 (x=1.5) films grown by hat wall technique were studied in the wide (5-14 T) range of the magnetic field through the temperature interval 77-300 κ The results were analyzed in the terms of the many-valley model of energy spectrum with isotropic carrier scattering. An anisotropy of the constant-energy surface becomes weaker along the binary and bisector axes (m1/m2) in a view of turn on the tilt angle (Θ) between the principal axes of the constant-energy ellipsoids and the crystallographic axes for the film in comparison with bulk Bi2-xSbxTe3. Features of temperature dependence of the degeneracy parameter (βd) for the films can be explained by additional charge carrier scattering at block boundaries. In the model with anisotropic scattering mechanism, carrier scattering along bisector directions are primary in the films. Obtained data on anisotropy of the constant-energy surface and scattering mechanism looks important for formation of the thermoelectric Bi2-xSbxTe3 film heterostructures with enhanced figure of merit. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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